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World Journal of Engineering
Research and Technology

( An ISO 9001:2015 Certified International Journal )

An International Peer Reviewed Journal for Engineering Research and Technology

ISSN 2454-695X

Impact Factor : 5.924

ICV : 79.45

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*Munjaji E. Dudhamal, Jayesh R. Pawar and Rajesh A. Joshi*


The synthesis controlled optoelectronic and physicochemical properties of CdS thin films make it one of the potentially important semiconducting materials for application in various gadgets, sensors such as solar cell etc. The synthesis technologies includes physical as well as chemical approach, with an ultimate goal to control and modify the conductivity of materials for its applications, hence considering this aspect, we have tried to study the Fe doping influence on photoconductivity of CdS thin films prepared using large area depositing, user friendly, cost effective chemical route on glass substrate. The synthesized as deposited and Fe doped CdS thin films characterized for evaluating the current density and conductivity using I-V characteristics, crystal structure, phase transition determined using X-ray diffraction (XRD) where peaks representing the planes (002), (101), (111), (110) and (200) confirms the formation of hexagonal phase of CdS thin films, while no specific separate peak confirming the formation of Fe doping is observed, except suppressing of (111) and (200) planes. Elemental composition and film morphology studied with the help of energy dispersive X-ray diffraction analysis (EDAX) equipped scanning electron microscopy (SEM) revealed and confirmed the expected and observed elemental composition; film morphology represents voids, rough and granular structural distribution over the substrate surface. Optical absorbance spectra revealed shift in absorbance peak from ~467 to ~495nm associated with band to band transition and spin orbit interaction on doping along with decrease in energy band gap from 2.19 to 2.04eV. The electrical properties revealed increase in electrical conductivity; this is also supported by an increment in current density upon Fe doping.

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