World Journal of Engineering Research and Technology

Prof. Dr. Huynh Van Cong*

ABSTRACT

In the - crystalline alloy, , various electrical-and-thermoelectric laws, relations and coefficients, enhanced by our static dielectric constant law given in Equations (1a, 1b), being due to the effects of the size of donor (acceptor) d(a)-radius and the x-concentration, by our accurate Fermi energy given in Eq. (11), and finally by our electrical conductivity model given in Eq. (14), are now investigated, basing on the same physical model and mathematical treatment method, as those used in our recent works.[1, 2] It should be noted here that, for x=0, these obtained numerical results are reduced to those given in the n(p)-type degenerate GaAs-crystal.[4] Then, some remarkable results could be cited in the following. In Tables 5n(5p) given Appendix 1, for a given impuritydensity and with increasing temperature T, and then in Tables 6n(6p) given Appendix 1, for a given and with decreasing N, the reduced Fermi-energy decreases, and other thermoelectric coefficients are in variations, as indicated by the arrows by: (increase: , decrease: ). Further, one notes in these Tables that, for any given x, and N (or T), with increasing T (or decreasing N) one obtains: (i) for , while the numerical results of the Seebeck coefficient S present a same minimum , those of the figure of merit ZT show a same maximum , (ii) for , the numerical results of S, ZT, the Mott figure of merit , the first Van-Cong coefficient VC1, and the Thomson coefficient present the same results: , 0.715, 3.290, , and , respectively, and finally (iii) for , . It seems that these same obtained results could represent a new law for the thermoelectric properties, obtained in the degenerate case ( ).

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