Abstract
THE CHARACTERISTIC PARAMETERS OF SILICON, DOPED WITH VANADIUM
Khojakbar S. Daliev*
ABSTRACT
In this work, we performed a systematic analysis of the results on the study of silicon doped with vanadium. It is shown that the atoms of vanadium in silicon created a number of deep levels with different ionization energies. Experiments were performed to study the energy level spectrum of vanadium by method of photo capacitance and it is shown that vanadium in silicon creates deep levels Ec ? 0.45 eV and Ec ? 0.52 eV and Ev +0.41 eV, depending on the type of conductivity of the initial silicon and the cooling rate of the sample after diffusion, and the level of Ec ? 0.22 eV is a defect in the heat treatment.
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