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World Journal of Engineering
Research and Technology

An International Peer Reviewed Journal for Engineering Research and Technology

ISSN 2454-695X

Impact Factor : 4.326

ICV : 79.45

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Abstract

DEEP LEVELS OF ZIRCONIUM IN SILICON AND SILICON STRUCTURES

Shakhrukh Kh. Daliev*

ABSTRACT

By means of methods transient capacitance spectroscopy of deep levels studied the formation of defects in silicon and silicon structures, doped Zirconium. Discovered that diffusive introduction of zirconium into the silicon leads to the formation of three deep levels with fixed ionization energies of Ec–0.22 eV, Ec–0.42 eV and Ev+0.30 eV, and dominate the last two levels. It is established that the efficiency of the formation of deep centers associated with the atoms of zirconium increases with temperature diffusion and the cooling rate after diffusion.

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