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FEATURES OF THE TEMPERATURE SENSOR IN FIELD-EFFECT TRANSISTOR
*Karimov A. V., Rakhmatov A. Z., Skornyakov S. P., Djurayev D. R.
It is experimentally shown that the temperature coefficient of sensitivity of field-effect transistor in channel depletion mode is independent from the process parameters of the transistor structure. In this case temperature coefficient of sensitivity and the magnitude of base thickness growth by temperature for all field-effect transistors has the same value.[Full Text Article]