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World Journal of Engineering
Research and Technology

An International Peer Reviewed Journal for Engineering Research and Technology

ISSN 2454-695X

Impact Factor : 5.218

ICV : 79.45

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Abstract

FORMATION OF THE MECHANISM OF PHOTO-SENSITIVE STRUCTURES WITH BARRIERS OF METAL SEMICONDUCTOR IN PHOTODIODIC AND PHOTOVOLTATIC MODE

Feruza Giyasova*

ABSTRACT

In this paper, the results of a study of the photosensitivity mechanisms of two-barrier one and two basic structures based on gallium arsenide and silicon with a metal-semiconductor transition with different thicknesses of the base area is considered. The results of the analysis of the photodiode and photovoltaic mode of structures with metalsemiconductor barriers are presented on the basis of the obtained electrophysical characteristics.

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