World Journal of Engineering Research and Technology (WJERT) has indexed with various reputed international bodies like : Google Scholar , Index Copernicus , Indian Science Publications , SOCOLAR, China , International Institute of Organized Research (I2OR) , Cosmos Impact Factor , Research Bible, Fuchu, Tokyo. JAPAN , Scientific Indexing Services (SIS) , Jour Informatics (Under Process) , UDLedge Science Citation Index , International Impact Factor Services , International Scientific Indexing, UAE , International Society for Research Activity (ISRA) Journal Impact Factor (JIF) , International Innovative Journal Impact Factor (IIJIF) , Science Library Index, Dubai, United Arab Emirates , Scientific Journal Impact Factor (SJIF) , Science Library Index, Dubai, United Arab Emirates , Eurasian Scientific Journal Index (ESJI) , Global Impact Factor (0.342) , 

World Journal of Engineering
Research and Technology

An International Peer Reviewed Journal for Engineering Research and Technology

ISSN 2454-695X

Impact Factor : 4.326

ICV : 79.45

News & Updation

  • Article Invited for Publication

    Article are invited for publication in WJERT Coming Issue

  • WJERT New Impact Factor

    Its our Pleasure to Inform you that WJERT Impact Factor has been increased from 3.419 to 4.236 due to high quality Publication at International Level

  • ICV

    WJERT Rank with Index Copernicus Value 79.45 due to high reputation at International Level

  • WJERT JANUARY ISSUE PUBLISHED

    JANUARY 2018 Issue has been successfully launched on 1 January 2018

  • New Issue Published

    Its Our pleasure to inform you that, WJERT 1 January 2018 Issue has been Published, Kindly check it on http://wjert.org/home/current_issues

Indexing

Abstract

THE EFFECT OF RADIATION ON FUNDAMENTAL PARAMETERS OF A SILICON-BASED SEMICONDUCTOR STRUCTURE

*Dr. Karimov A. V., Rahmatov A. Z., Yodgorova D. M., Kuliev Sh. M., Bebitov R. R.

ABSTRACT

We report the results of the study of influence of radiation on voltage drop and resistivity of silicon power diodes. It was shown that the increase in the voltage drop in samples exposed to radiation is largely associated with the increase in the resistivity of the base region.

[Full Text Article]