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World Journal of Engineering Research and Technology

( An ISO 9001:2015 Certified International Journal )

An International Peer Reviewed Journal for Engineering Research and Technology

An Official Publication of Society for Advance Healthcare Research (Reg. No. : 01/01/01/31674/16)

ISSN 2454-695X

Impact Factor : 7.029

ICV : 79.45

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Abstract

THE EFFECT OF RADIATION ON FUNDAMENTAL PARAMETERS OF A SILICON-BASED SEMICONDUCTOR STRUCTURE

*Dr. Karimov A. V., Rahmatov A. Z., Yodgorova D. M., Kuliev Sh. M., Bebitov R. R.

ABSTRACT

We report the results of the study of influence of radiation on voltage drop and resistivity of silicon power diodes. It was shown that the increase in the voltage drop in samples exposed to radiation is largely associated with the increase in the resistivity of the base region.

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