World Journal of Engineering Research and Technology (WJERT) has indexed with various reputed international bodies like : Google Scholar , Index Copernicus , Indian Science Publications , SOCOLAR, China , International Institute of Organized Research (I2OR) , Cosmos Impact Factor , Research Bible, Fuchu, Tokyo. JAPAN , Scientific Indexing Services (SIS) , Jour Informatics (Under Process) , UDLedge Science Citation Index , International Impact Factor Services , International Scientific Indexing, UAE , International Society for Research Activity (ISRA) Journal Impact Factor (JIF) , International Innovative Journal Impact Factor (IIJIF) , Science Library Index, Dubai, United Arab Emirates , Scientific Journal Impact Factor (SJIF) , Science Library Index, Dubai, United Arab Emirates , Eurasian Scientific Journal Index (ESJI) , Global Impact Factor (0.342) , 

World Journal of Engineering
Research and Technology

An International Peer Reviewed Journal for Engineering Research and Technology

ISSN 2454-695X

Impact Factor : 5.218

ICV : 79.45

News & Updation

  • Article Invited for Publication

    Article are invited for publication in WJERT Coming Issue

  • New Issue Published

    Its Our pleasure to inform you that, WJERT 1 May 2018 Issue has been Published, Kindly check it on http://wjert.org/home/current_issues

  • WJERT New Impact Factor

    Its our Pleasure to Inform you that WJERT Impact Factor has been increased from 4.236 to 5.218 due to high quality Publication at International Level

  • ICV

    WJERT Rank with Index Copernicus Value 79.45 due to high reputation at International Level

  • WJERT MAY ISSUE PUBLISHED

    MAY 2018 Issue has been successfully launched on 1 May 2018

Indexing

Abstract

STUDY OF THE PROCESSES OF DEFECT FORMATION IN SILICON, DOPED WITH COBALT

Sharifa B. Utamuradova*, Zafar O. Olimbekov

ABSTRACT

The processes of formation of deep centers in silicon mixed with cobalt are investigated by means of methods of capacitive spectroscopy. It was found that in n-Si, doped with cobalt formed four deep levels with fixed energy of ionization: Ec-0.20 eV, Ec-0.33 eV, Ec –0.45 eV and Ec –0.54 eV with capture cross section of charge carriers ?n=4?10-17 cm2, ?n =2?10-15 cm2, ?n =1.1?10-15 cm2 and ?n =1.5?10-15 cm2, respectively. It is shown that in the samples p-Si, doped with cobalt there is only one level ?v +0.32 eV with charge carrier capture sections ??=2?10-16 cm2, respectively.

[Full Text Article]