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World Journal of Engineering
Research and Technology

An International Peer Reviewed Journal for Engineering Research and Technology

ISSN 2454-695X

Impact Factor : 5.218

ICV : 79.45

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Indexing

Abstract

ON THE ROLE OF OXYGEN AND YTTERBIUM IN THE FORMATION OF RADIATION DEFECTS IN SILICON AFTER GAMMA-IRRADIATION

Sharifa B. Utamuradova*, Khojakbar S. Daliev., Shakhrukh Kh. Daliev and Mansur B.
Bekmuratov

ABSTRACT

In this work, using DLTS investigated the influence of oxygen content and ytterbium on the efficiency of formation of radiation defects in n- Si irradiated by gamma-quanta of 60Co. It is shown that a high content of optically active interstitial oxygen is dominated by the formation of the A-center in comparison with the E-center. It was found that the presence of ytterbium atoms in silicon leads to a slowdown in the process of radiation defect formation: the concentration of A-centers is 2 times less, and E-centers 5 times less in the samples n-Si compared with control samples.

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