World Journal of Engineering Research and Technology (WJERT) has indexed with various reputed international bodies like : Google Scholar , Index Copernicus , Indian Science Publications , SOCOLAR, China , International Institute of Organized Research (I2OR) , Cosmos Impact Factor , Research Bible, Fuchu, Tokyo. JAPAN , Scientific Indexing Services (SIS) , Jour Informatics (Under Process) , UDLedge Science Citation Index , International Impact Factor Services , International Scientific Indexing, UAE , International Society for Research Activity (ISRA) Journal Impact Factor (JIF) , International Innovative Journal Impact Factor (IIJIF) , Science Library Index, Dubai, United Arab Emirates , Scientific Journal Impact Factor (SJIF) , Science Library Index, Dubai, United Arab Emirates , Eurasian Scientific Journal Index (ESJI) , Global Impact Factor (0.342) , IFSIJ Measure of Journal Quality , Web of Science Group (Under Process) , Directory of Research Journals Indexing , Scholar Article Journal Index (SAJI) , International Scientific Indexing ( ISI ) , 

World Journal of Engineering
Research and Technology

( An ISO 9001:2015 Certified International Journal )

An International Peer Reviewed Journal for Engineering Research and Technology

ISSN 2454-695X

Impact Factor : 5.924

ICV : 79.45

News & Updation

  • Article Invited for Publication

    Article are invited for publication in WJERT Coming Issue

  • ICV

    WJERT Rank with Index Copernicus Value 79.45 due to high reputation at International Level

  • New Issue Published

    Its Our pleasure to inform you that, WJERT 1 November 2021 Issue has been Published, Kindly check it on http://wjert.org/home/current_issues

  • WJERT New Impact Factor

    Its our Pleasure to Inform you that WJERT Impact Factor has been increased from  5.549 to 5.924 due to high quality Publication at International Level

  • WJERT: NOVEMBER ISSUE PUBLISHED

    NOVEMBER 2021 Issue has been successfully launched on 1 November 2021.

Indexing

Abstract

STUDY OF INFLUENCE OF SCATTERING ON HOT ELECTRON USING MONTE CARLO METHOD

Manisha Samarth, Anjana Kumari and Tarun Kumar Dey*

ABSTRACT

An advanced semiconductor devices have been scaled down to nano scale size, and the device size is further decreasing. If we shorten the channel length to less than or comparable to the mean free path of carriers, frequency of scattering events in the device is diminished, so that near ballistic transport is expected even at room temperature. In the conventional metal oxide semiconductor field-effect Transistor (MOSFET), the influence of scattering in the drain region on carrier transport is negligible because scattering is dominant in the channel. The channel is completely ballistic. Electrons injected from the source flow into the drain and then become hot electrons, because electrons do not suffer any scattering and do not lose their energy in the channel region. These are shown in figures.

[Full Text Article]