Abstract
INFLUENCE OF YTERBIUM ATOMS ON THE FORMATION OF RADIATION DEFECTS WHEN IRRADIATING SILICON WITH 60Co γ−QUANTUMS
Kh. S. Daliev, Sh. Kh. Daliev, M. B. Bekmuratov*, K. M. Fayzullaev and Sh. A. Yusupova
ABSTRACT
In this work, the influence of a rare earth impurity – ytterbium (Yb) onthe process of formation of radiation defects in silicon under theinfluence of irradiation using non-stationary capacitance spectroscopy(DLTS) methods was studied. From the analysis of the measuredspectra, it follows that the presence of Yb leads to a slowdown in theprocess of radiation defect formation: the concentration of the A-centerin the n-Si<Yb> samples is 4÷5 times less than in the control samples.
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