Abstract
NEW CRITICAL IMPURITY DENSITY IN METAL-INSULATOR TRANSITION, OBTAINED IN VARIOUS N(P)- TYPE DEGENERATE CRYSTALLINE ALLOYS, BEING JUST THAT OF CARIERS LOCALIZED IN EXPONENTIAL BAND TAILS
Prof. Huynh Van Cong*
ABSTRACT
By basing on the same physical model and treatment method, as usedin our recent works (Van Cong, 2023; 2023; 2023), we will investigatethe critical impurity densities in the metal-insulator transition (MIT),obtained in two n(p)-type degenerate [ ]-crystalline alloys, , being due to the effects of the size ofdonor (acceptor) d(a)-radius, , the x- concentration, and finally thehigh d(a)-density, N, assuming that all the impurities are ionized evenat T=0 K. In such n(p)-type degenerate crystalline alloys, we willdetermine: (i)-the critical impurity density in theMIT, as that given in Eq. (8), by using an empirical Mott parameter, and (ii)-the density of electrons (holes) localized in theexponential conduction (valence)-band tails (EBT), , as that given in Eq.(26), by using our empirical Heisenberg parameter, , as given in Eq. (15),according to: for given and x, with a precisionof the order of , as observed in Tables 2-8. In other words, such the critical d(a)-density is just the density of electrons (holes) localized in the EBT,, respectively.
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