Abstract
NEW CRITICAL DENSITY IN METAL-INSULATOR TRANSITION, OBTAINED IN n(p)-TYPE DEGENERATE, Si(1-x)Ge(x)-CRYSTALLINE ALLOY, AND ITS APPLICATIONS. (V)
Prof. Dr. Huynh Van Cong*
ABSTRACT
In n(p)-type degenerate X(x)crystalline alloy by basing on the same physical model and treatment method, as used in our recent works.[1,2] we will investigate (1)-the critical impurity densities in the Mott metal-insulator transition (Mott-MIT), , determined in Eq. (8), and the origin of this Mott’s criterium, Eq. (8), being investigated in Eq. (9b), (2)-the density of electrons (holes) localized in the exponential conduction (valence)-band tails (EBT), , given in Eq. (26), giving rise to: with a precision of the order of , as observed in Tables 1n and 1p, which could beconcluded that is also the density of electrons (holes) localized in the EBT, and (3)-the optical band gap,, determined in Eq. (28), , showing that the numerical results of are in good agreement with experimental ones, obtained by Wagner and del Alamo (1988), with maximal relative deviations: 5.38 % (9.07 %), and 2.06 % (5.16 %), as observed in Tables 2n and 2p; further, for x(=0, 0.5, 1), the numerical results of are given in Tables 3n and 3p.
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