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PHYSICAL-TECHNOLOGICAL ASPECTS OF A MULTIFUNCTIONAL SENSOR BASED ON A FIELD-EFFECT TRANSISTOR
Karimov A.V.*, Djurayev D.R., Turaev A.A.
The physical and technological criteria are presented for providing to the junction field-effect transistor sensitivity to external influences. It is shown that in the channel depletion mode by drain-gate voltage photosensitivity of drain-gate junction or temperature sensitivity of pinch-off voltage are greater than in the other modes.[Full Text Article]