Abstract
OPTICAL COEFFICIENTS IN THE N(P)-TYPE DEGENERATE GaAs(1-x) Sb(x)-CRYSTALLINE ALLOY, DUE TO THE NEW STATIC DIELECTRIC CONSTANT-LAW AND THE GENERALIZED MOTT CRITERIUM IN THE METAL-INSULATOR TRANSITION. (2)
*Prof. Dr. Huynh Van Cong
ABSTRACT
In the n(p)-type - crystalline alloy, with , basingon our two recent works[1,2], for a given x, and with an increasing ,the optical coefficients have been determined, as functions of thephoton energy E, total impurity density N, the donor (acceptor) radius, concentration x, and temperature T. Those results have beenaffected by (i) the important new -law, developed inEquations (8a, 8b), stating that, for a given x, due to the impurity-sizeeffect, decreases ( ) with an increasing ( ) , and then by (ii) thegeneralized Mott critical d(a)-density defined in the metal-insulatortransition (MIT), ), as observed in Equations (8c, 9a).Furthermore, we also showed that is just the density of carriers localized inexponential band tails, with a precision of the order of , as that given in Table 4of Ref.[1], according to a definition of the effective density of electrons (holes) given inparabolic conduction (valence) bands by: , asdefined in Eq. (9d). In summary, due to the new -law and to the effective density ofelectrons (holes) given in parabolic conduction (valence) bands , for a givenx, and with an increasing , the numerical results of all the optical coefficients, obtained inappropriated physical conditions (E, N, T), and calculated by using Equations (15, 16, 20, 21), are reported in Tables 1, 2, 3n, 3p, 4n, 4p, 5n, and 5p in Appendix 1.
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