World Journal of Engineering Research and Technology (WJERT) has indexed with various reputed international bodies like : Google Scholar , Index Copernicus , Indian Science Publications , SOCOLAR, China , International Institute of Organized Research (I2OR) , Cosmos Impact Factor , Research Bible, Fuchu, Tokyo. JAPAN , Scientific Indexing Services (SIS) , Jour Informatics (Under Process) , UDLedge Science Citation Index , International Impact Factor Services , International Scientific Indexing, UAE , International Society for Research Activity (ISRA) Journal Impact Factor (JIF) , International Innovative Journal Impact Factor (IIJIF) , Science Library Index, Dubai, United Arab Emirates , Scientific Journal Impact Factor (SJIF) , Science Library Index, Dubai, United Arab Emirates , Eurasian Scientific Journal Index (ESJI) , Global Impact Factor (0.342) , IFSIJ Measure of Journal Quality , Web of Science Group (Under Process) , Directory of Research Journals Indexing , Scholar Article Journal Index (SAJI) , International Scientific Indexing ( ISI ) , Scope Database , 

World Journal of Engineering
Research and Technology

( An ISO 9001:2015 Certified International Journal )

An International Peer Reviewed Journal for Engineering Research and Technology

ISSN 2454-695X

Impact Factor : 5.924

ICV : 79.45

News & Updation

  • Article Invited for Publication

    Article are invited for publication in WJERT Coming Issue

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    WJERT Rank with Index Copernicus Value 79.45 due to high reputation at International Level

  • New Issue Published

    Its Our pleasure to inform you that, WJERT November 2022 Issue has been Published, Kindly check it on

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    Its our Pleasure to Inform you that WJERT Impact Factor has been increased from  5.549 to 5.924 due to high quality Publication at International Level


    NOVEMBER 2022 Issue has been successfully launched on 1 November 2022.




Sindhu S. J.* and Mukthi S.L.


The VLSI circuits are prone to soft errors when they are exposed to extreme environmental conditions and there is a growing demand for low-voltage, low-power applications. The memory arrays consist of very crucial data and take enormous areas on the silicon dies. Radiation Hardening can be achieved by implementing large arrays or redundant bitcells and operated on high voltage, this adds to the overhead of area and limits the minimum operating voltage. This paper proposes high soft-error robust, low-voltage and radiation-hardened Static Random Access Memory. The proposed cell layout is only two times larger than the conventional 6T SRAM. The 13T SRAM proposed has a dual-driven separated-feedback mechanism which can tolerate high charge deposits and has low Supply Voltage. 0.45micrometer CMOS technology is used in designing the 32*32 array with a low subthreshold voltage.

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