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World Journal of Engineering Research and Technology

( An ISO 9001:2015 Certified International Journal )

An International Peer Reviewed Journal for Engineering Research and Technology

An Official Publication of Society for Advance Healthcare Research (Reg. No. : 01/01/01/31674/16)

ISSN 2454-695X

Impact Factor : 7.029

ICV : 79.45

News & Updation

  • Article Invited for Publication

    Article are invited for publication in WJERT Coming Issue

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    WJERT Rank with Index Copernicus Value 79.45 due to high reputation at International Level

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    Its Our pleasure to inform you that, WJERT March 2024 Issue has been Published, Kindly check it on https://www.wjert.org/home/current_issues

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    WJERT Impact Factor has been Increased to 7.029 for Year 2024.

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    March 2024 Issue has been successfully launched on 1 March 2024.

Indexing

Abstract

LOW-VOLTAGE RADIATION-HARDENED SRAM

Sindhu S. J.* and Mukthi S.L.

ABSTRACT

The VLSI circuits are prone to soft errors when they are exposed to extreme environmental conditions and there is a growing demand for low-voltage, low-power applications. The memory arrays consist of very crucial data and take enormous areas on the silicon dies. Radiation Hardening can be achieved by implementing large arrays or redundant bitcells and operated on high voltage, this adds to the overhead of area and limits the minimum operating voltage. This paper proposes high soft-error robust, low-voltage and radiation-hardened Static Random Access Memory. The proposed cell layout is only two times larger than the conventional 6T SRAM. The 13T SRAM proposed has a dual-driven separated-feedback mechanism which can tolerate high charge deposits and has low Supply Voltage. 0.45micrometer CMOS technology is used in designing the 32*32 array with a low subthreshold voltage.

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