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World Journal of Engineering Research and Technology

( An ISO 9001:2015 Certified International Journal )

An International Peer Reviewed Journal for Engineering Research and Technology

An Official Publication of Society for Advance Healthcare Research (Reg. No. : 01/01/01/31674/16)

ISSN 2454-695X

Impact Factor : 7.029

ICV : 79.45

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Indexing

Abstract

FEATURES OF THE TEMPERATURE SENSOR IN FIELD-EFFECT TRANSISTOR

*Karimov A. V., Rakhmatov A. Z., Skornyakov S. P., Djurayev D. R.

ABSTRACT

It is experimentally shown that the temperature coefficient of sensitivity of field-effect transistor in channel depletion mode is independent from the process parameters of the transistor structure. In this case temperature coefficient of sensitivity and the magnitude of base thickness growth by temperature for all field-effect transistors has the same value.

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