Abstract
EFFECT OF IMPURITIES OF DIFFICULT MELT ELEMENTS ON THE PHOTOSENSITIVITY OF DOPED SILICON
Shakhrukh Kh. Daliev*
ABSTRACT
The influence of impurities of zirconium and hafnium on the properties of silicon and defines their role in enhancing the photosensitivity of doped silicon. It is shown that structures based on silicon doped as zirconium and hafnium, possess photosensitivity in the range of 3-5 microns, with a maximum ?Si= 4.1 microns at room temperature.
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