Abstract
STUDY OF THE INTERACTION OF EUROPIUM WITH OXYGEN IN SILICON
Shakhrukh Kh. Daliev*
ABSTRACT
The interaction of europium atoms with technological impurities (oxygen and carbon) in silicon was studied by infrared spectroscopy. It is established that the diffusion of europium in Si leads to a decrease in the concentration of optically active oxygen NO opt for 20 ? 30 %. A partial recovery of NO opt at the subsequent high-temperature treatment was found, which is associated with the decay of the supposed complexes of europium atoms with technological impurities and activation of europium atoms.
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