Abstract
ON THE ROLE OF OXYGEN AND YTTERBIUM IN THE FORMATION OF RADIATION DEFECTS IN SILICON AFTER GAMMA-IRRADIATION
Sharifa B. Utamuradova*, Khojakbar S. Daliev., Shakhrukh Kh. Daliev and Mansur B.
Bekmuratov
ABSTRACT
In this work, using DLTS investigated the influence of oxygen content and ytterbium on the efficiency of formation of radiation defects in n- Si irradiated by gamma-quanta of 60Co. It is shown that a high content of optically active interstitial oxygen is dominated by the formation of the A-center in comparison with the E-center. It was found that the presence of ytterbium atoms in silicon leads to a slowdown in the process of radiation defect formation: the concentration of A-centers is 2 times less, and E-centers 5 times less in the samples n-Si compared with control samples.
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