Abstract
STUDY OF INFLUENCE OF SCATTERING ON HOT ELECTRON USING MONTE CARLO METHOD
Manisha Samarth, Anjana Kumari and Tarun Kumar Dey*
ABSTRACT
An advanced semiconductor devices have been scaled down to nano scale size, and the device size is further decreasing. If we shorten the channel length to less than or comparable to the mean free path of carriers, frequency of scattering events in the device is diminished, so that near ballistic transport is expected even at room temperature. In the conventional metal oxide semiconductor field-effect Transistor (MOSFET), the influence of scattering in the drain region on carrier transport is negligible because scattering is dominant in the channel. The channel is completely ballistic. Electrons injected from the source flow into the drain and then become hot electrons, because electrons do not suffer any scattering and do not lose their energy in the channel region. These are shown in figures.
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