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World Journal of Engineering Research and Technology

( An ISO 9001:2015 Certified International Journal )

An International Peer Reviewed Journal for Engineering Research and Technology

An Official Publication of Society for Advance Healthcare Research (Reg. No. : 01/01/01/31674/16)

ISSN 2454-695X

Impact Factor : 7.029

ICV : 79.45

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Abstract

DESIGN AND PERFORMANCE ANALYSIS OF DUAL MATERIAL GATE SOI MOSFET AND ITS APLLICATION

Monika Joshi* and Dr. Vishal Ramola

ABSTRACT

With the continuous shrinking in the size of MOSFET, second order effect known as Short Channel Effect begin to influence the device performance. SOI is an advanced technology designed to operate at low power. With this a new technology called Dual Material Gate is used to improve the performance of the MOSFET by reducing Short Channel Effects such as drain induced barrier lowering (DIBL), Channel length modulation and Hot Carrier Effect. This paper presents performance analysis of Dual Material Gate SOI MOSFET .The analytical model of MOSFET has been developed and compared with the results for the device parameter obtain by numerical analysis varying doping concentration and dielectric material using TCAD (Technology Computer Aided Design). It has been observed that this structure is able to reduce Short Channel Effects (Drain induced barrier lowering, hot electron effect) and increases electron transport efficiency.

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